PART |
Description |
Maker |
MMDF4P03HD |
DUAL TMOS POWER MOSFET 30 VOLTS
|
MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
|
IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 100V7A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管(N沟道增强型硅门)) From old datasheet system TMOS POWER FET 27 AMPERES TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc. ON Semiconductor
|
MMFT2955E MMFT2955E_D ON2219 ON2218 MMFT2955ET1 |
1200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA From old datasheet system N-hannel Enhancement-ode Logic Level SOT23 TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semi
|
MTP12N10E MTP12N10E_D ON2545 MTP12N10E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM TMOS POWER FET 12 AMPERES 60 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
MMFT1N10E_D ON2216 MMFT1N10E MMFT1N10 |
MEDIUM POWER TMOS FET 1 AMP 100 VOLTS 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA N-hannel Enhancement-ode Logic Level SOT23 From old datasheet system
|
Motorola Mobility Holdings, Inc. ON Semi MOTOROLA[Motorola, Inc]
|
MTP10N60E7 ON2541 MTP10N60E7-D |
TMOS 7 E-FET High Energy Power FET TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS 7 E-FET High Energy Power FET From old datasheet system TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
MTB50N06V_D MTB50N06V ON2433 MTB50N06V-D |
TMOS V Power Field Effect Transistor D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 42 AMPERES 60 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
ISL55110IRZ-T ISL55110-11 |
Dual, High Speed MOSFET Driver; Temperature Range: -40°C to 85°C; Package: 16-QFN T&R 3.5 A 2 CHANNEL, HALF BRDG BASED MOSFET DRIVER, PQCC16
|
Intersil, Corp. Intersil Corporation
|
MTY16N80E_D MTY16N80E ON2712 MTY16N80E-D |
TMOS E-FET Power Field Effect Transistor TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
MTP5PXX MTP7N06 |
(MTPxxxx) TMOS Power MOSFET
|
Motorola
|